SMCJ130CA V6G

Taiwan Semiconductor
SMCJ5V0(C)A – SMCJ170(C)A Taiwan Semiconductor 1500W Transient Voltage Suppressor FEATURES ● Glass passivated junction ● 1500W peak pulse power capability on 10/1000µs waveform ● Excellent clamping capability ● Low-Incremental surge resistance ● Fast response time: Typically less than 1.0ps from 0V to BV minimum for unidirectional and 5.0ns for bidirectional ● Typical IR less than 1μA above 10...
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Технические характеристики

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Корпус DO214AB
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 1500W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB
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SMCJ5V0(C)A – SMCJ170(C)A Taiwan Semiconductor 1500W Transient Voltage Suppressor FEATURES ● Glass passivated junction ● 1500W peak pulse power capability on 10/1000µs waveform ● Excellent clamping capability ● Low-Incremental surge resistance ● Fast response time: Typically less than 1.0ps from 0V to BV minimum for unidirectional and 5.0ns for bidirectional ● Typical IR less than 1μA above 10V ● UL certificate #E258596 ● UL94V-0 flammability classification SMC/DO-214AB Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical chatacteristics apply in both directions suitable for bi-directional applications. ABSOLUTE MAXIMUM RATINGS Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. PARAMETER Peak pulse power dissipation tp=1ms Peak pulse current on 10/1000µs waveform Non-Repetitive Peak Forward Surge Current (1) Superimposed on Rated Load (JEDEC Method) Junction temperature Storage temperature SYMBOL PPPM IPPM VALUE 1500 see table UNIT W A IFSM 200 A TJ -55 to +150 °C TSTG -55 to +150 °C Note: 1. Measured on 8.3ms single half-sine wave; duty cycle = 4 pulses per minute maximum. 1 Version: B1910 PDF
Документация на SMCJ100CA 

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Дата модификации: 15.07.2020

Размер: 174.9 Кб

7 стр.

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