SMDJ15AHM6G

Taiwan Semiconductor
SMDJ10A - SMDJ100A Taiwan Semiconductor 3000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● ● Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Moisture sensitivity level: level 1, per J-STD-020 AEC-Q101 qualified available: ordering code with suffix “H” ● Compliant t...
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Технические характеристики

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Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (диапазон)
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 3000W, 15V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
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SMDJ10A - SMDJ100A Taiwan Semiconductor 3000W, 10V - 100V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● ● Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Moisture sensitivity level: level 1, per J-STD-020 AEC-Q101 qualified available: ordering code with suffix “H” ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC PARAMETER VALUE UNIT VWM 10 - 100 V VBR 11.1 - 123 V PPK 3000 W TJ MAX 175 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● Immunization of sensitive devices in automotive, telecommunications, consumer electronics, and industrial equipment from electrostatic discharge (ESD) and transient voltages induced by load switching and lightning. MECHANICAL DATA ● Case：DO-214AB (SMC) ● Molding compound meets UL 94V-0 flammability rating DO-214AB (SMC) ● Terminal：Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity：As marked ● Weight： 0.29 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Peak power dissipation at TA=25°C, tp=1ms SYMBOL VALUE UNIT PPK 3000 W PD 6.5 W IFSM 300 A VF 3.5 / 5.0 V TJ -55 to +175 °C -55 to +175 °C (1) Steady state power dissipation at TA=25°C Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (2) Forward Voltage @ IF=100A for Unidirectional only Junction temperature Storage temperature TSTG Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C per Fig. 2 2. VF=3.5V on SMDJ10A - SMDJ90A devices and VF=5.0V on SMDJ100A Devices for bipolar applications 1. For bidirectional use CA suffix for SMDJ10A – SMDJ64A 2. Electrical characteristics apply in both directions 1 Version: F1903 PDF
Документация на SMDJ15AHM6G 

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Дата модификации: 31.05.2019

Размер: 223 Кб

7 стр.

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