BSS159N-VB
BSS159N
www.VBsemi.com
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (mA)
2.8 at VGS = 10 V
60
250
SOT-23
G
1
3
• Halogen-free According to IEC 61249-2-21
Definition
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• 1200V ESD Protection
• Compliant to RoHS...
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BSS159N
www.VBsemi.com
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (mA)
2.8 at VGS = 10 V
60
250
SOT-23
G
1
3
• Halogen-free According to IEC 61249-2-21
Definition
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• 1200V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
D
BENEFITS
S
2
Top View
D
•
•
•
•
•
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 100 °C
Pulsed Drain Currenta
Power Dissipationb
ID
IDM
TA = 25 °C
TA = 100 °C
Maximum Junction-to-Ambientb
Operating Junction and Storage Temperature Range
PD
Unit
V
250
150
mA
800
0.30
0.13
W
RthJA
350
°C/W
TJ, Tstg
- 55 to 150
°C
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
JSRRJ T
1
PDF
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