IRF740APBF

VBSemi
IRF740APBF www.VBsemi.com /$IBOOFM57 %4 4VQFS+VODUJPOPower MOSFET FEATURES PRODUCT SUMMARY • • • • • 700 VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.5  Qgs (nC)  Qgd (nC)  Configuration Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rate...
развернуть ▼ свернуть ▲
 
  • Корпус: —
  • Норма упаковки: 50  шт. (в линейках)

Аналоги 2

показать свернуть
Тип Наименование Корпус Упаковка i Карточка
товара
P= IRF740ASPBF (VBSEMI)
 
— в ленте 800 шт
 
P= IRF740PBF (JSMICRO)
 
TO220AB в линейках 50 шт
 

Файлы 1

показать свернуть
IRF740APBF www.VBsemi.com /$IBOOFM57 %4 4VQFS+VODUJPOPower MOSFET FEATURES PRODUCT SUMMARY • • • • • 700 VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.5  Qgs (nC)  Qgd (nC)  Configuration Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) APPLICATIONS Single • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial TO-220AB D G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 ID 9  IDM 21 Single Pulse Avalanche Energy b EAS 1.5 186 Maximum Power Dissipation PD 123 W TJ, Tstg -55 to +150  °C Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s dV/dt  300 UNIT V A W/°C mJ V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 3.5 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.  RR PDF
Документация на IRF740APBF 

VBL165R09S.pdf Keywords:

Дата модификации: 09.02.2023

Размер: 255.2 Кб

8 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.