IRF7473TRPBF

VBSemi
IRF7473TRPBF www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) VGS = 10 V 32 V mΩ ID 9 A 100 VDS • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC Single Configuration APPLICATIONS • Primary Side Switch D SO-8 S 1 8 D S 2...
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IRF7473TRPBF www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) VGS = 10 V 32 V mΩ ID 9 A 100 VDS • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC Single Configuration APPLICATIONS • Primary Side Switch D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Unit V 6b, c 5b, c 40 7 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 100 ± 20 9 6 A 3.8b, c 30 112 14 5 4b, c 2b, c - 55 to 150 TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. Symbol RthJA RthJF Typical 33 17 Maximum 40 21 Unit °C/W PDF
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Дата модификации: 08.02.2023

Размер: 342.8 Кб

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