WMB175N10HG4

WAYON
WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMB175N10HG4 uses Wayon's 4th generation power trench MOSFET D D D D D technology that has been especially tailored to minimize the on-state s ss resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. D DD G G ss PDFN5060-8L Features...
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  • Корпус: —
  • Норма упаковки: 3000  шт. (в ленте)

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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMB175N10HG2 (WAYON)
 
PDFN8L5X6 в ленте 3000 шт
 

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WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMB175N10HG4 uses Wayon's 4th generation power trench MOSFET D D D D D technology that has been especially tailored to minimize the on-state s ss resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. D DD G G ss PDFN5060-8L Features  VDS = 100V, ID = 46A RDS(on) < 17.5mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge  High Speed Switching RoHS D compliant G Applications S  Power Management Switches  DC/DC Converter  LED Backlighting Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 46 29 A IDM 184 A EAS 80 mJ PD 71.4 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 52 °C/W Thermal Resistance from Junction-to-Case RθJC 1.75 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803821 1/7 s PDF
Документация на WMB175N10HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 26.05.2023

Размер: 617.7 Кб

7 стр.

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