WMJ028N10HGS

WAYON
WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G Features  D S TO-247 VDS= 100V, ID = 228A RDS(on) < 3m...
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  • Корпус: TO-247-3
  • Норма упаковки: 30  шт.

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WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G Features  D S TO-247 VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V  High Speed Power Switching  Low Gate Charge  Low RDS(ON)  100% EAS Guaranteed D RoHS compliant G Applications  DC/DC Converter  Power Management Switching  Motor Driver S Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID TC=100°C 228 144 A IDM 912 A EAS 583 mJ PD 320.5 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 42 °C/W Thermal Resistance from Junction-to-Case RθJC 0.39 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2022 Doc:W0803845 1/7 PDF
Документация на WMJ028N10HGS 

Shang Hai Wayon Thermo-Electro

Дата модификации: 28.04.2023

Размер: 598.9 Кб

7 стр.

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