WMJ10N80D1B

WAYON
WML10N80D1B WMJ10N80D1B 800V 10A 0.7Ω N-ch Power MOSFET Description TO-220F WMOS D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. TO-247 Features  Typ.RDS(on)=0.7Ω@VGS=10V  100% avalanche tested  RoHS Compliant D...
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Тип Наименование Корпус Упаковка i Карточка
товара
P= WML12N100C2 (WAYON)
 
TO220F в линейках 50 шт
 

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WML10N80D1B WMJ10N80D1B 800V 10A 0.7Ω N-ch Power MOSFET Description TO-220F WMOS D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. TO-247 Features  Typ.RDS(on)=0.7Ω@VGS=10V  100% avalanche tested  RoHS Compliant D,TAB RoHS Applications  SMPS  Charger  DC-DC compliant G S Absolute Maximum Ratings（TC=25℃） Parameter Symbol WML10N80D1B WMJ10N80D1B Unit Drain-source voltage VDSS 800 V Gate-source voltage VGS ±30 V ID 10 A IDM 40 A EAS 125 mJ Continuous drain current Pulsed drain current 1 Avalanche energy, single pulse 2 Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 1 65 416 W 0.5 3.3 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 10 A ISpulse 40 A Thermal Characteristic Thermal resistance,junction-to-case RθJC 2 0.3 ℃/W Thermal resistance,junction-to-ambient RθJA 62.5 50 ℃/W Rev.1.2 2023 www.way-on.com PDF
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Дата модификации: 11.01.2024

Размер: 1.24 Мб

8 стр.

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