WML20N65D1B

WAYON
WMJ20N65D1B WML20N65D1B WMK20N65D1B 650V 20A 0.37Ω N-ch Power MOSFET Description TO-220F TO-220 TO-247 WMOS D1 is Wayon’s 1 generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. st Features  Typ.RDS(on)=0.37Ω@VGS=10V  100% avalanche teste...
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Тип Наименование Корпус Упаковка i Карточка
товара
P= WML15N60C4 (WAYON)
 
TO220F в линейках 50 шт
 
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TO220F в линейках 50 шт
 
P= WML15N65C2 (WAYON)
 
TO220F в линейках 50 шт
 
P= WML14N60C4 (WAYON)
 
TO220F в линейках 50 шт
 
P- WML14N65C4 (WAYON)
 
TO220F
 
P- NCE70T360F (NCE)
 
TO220F
 
P- CRJF200N70G2 (CRMICRO)
 
TO220F

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WMJ20N65D1B WML20N65D1B WMK20N65D1B 650V 20A 0.37Ω N-ch Power MOSFET Description TO-220F TO-220 TO-247 WMOS D1 is Wayon’s 1 generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. st Features  Typ.RDS(on)=0.37Ω@VGS=10V  100% avalanche tested  RoHS Compliant D,TAB RoHS Applications  SMPS  Charger  DC-DC G compliant S Absolute Maximum Ratings（TC=25℃） Parameter Symbol WML WMK WMJ Unit Drain-source voltage VDSS 650 V Gate-source voltage VGS ±30 V ID 20 A IDM 80 A EAS 980 mJ Continuous drain current 1 Pulsed drain current Avalanche energy, single pulse 2 Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 1 74 250 313 W 0.6 2 2.5 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 20 A ISpulse 80 A Thermal Characteristic Thermal resistance,junction-to-case RθJC 1.7 0.5 0.4 ℃/W Thermal resistance,junction-to-ambient RθJA 62.5 62.5 40 ℃/W Rev.1.3 2023 www.way-on.com PDF
Документация на WML20N65D1B 

Дата модификации: 11.01.2024

Размер: 1.55 Мб

9 стр.

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