WMM7N80DB

WAYON
WML7N80DB WMM7N80DB 800V 7A 1.6Ω N-ch Power MOSFET Description TO-263 TO-220F WMOS D series is Wayon’s 1 generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. st Features  Typ.RDS(on)=1.6Ω@VGS=10V  100% avalanche tested  RoHS Compliant...
развернуть ▼ свернуть ▲
 
  • Корпус: —

Аналоги 2

показать свернуть
Тип Наименование Корпус Упаковка i Карточка
товара
P= WMM25N80M3 (WAYON)
 
TO263 в ленте 800 шт
 
P- NCE80T320D (NCE)
 
TO263
 

Файлы 1

показать свернуть
WML7N80DB WMM7N80DB 800V 7A 1.6Ω N-ch Power MOSFET Description TO-263 TO-220F WMOS D series is Wayon’s 1 generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. st Features  Typ.RDS(on)=1.6Ω@VGS=10V  100% avalanche tested  RoHS Compliant D RoHS Applications  SMPS  Charger  DC-DC G compliant S Absolute Maximum Ratings（TC=25℃） Parameter Symbol WML7N80DB WMM7N80DB Unit Drain-source voltage VDSS 800 V Gate-source voltage VGS ±30 V ID 7 A IDM 28 A EAS 670 mJ Continuous drain current Pulsed drain current 1 Avalanche energy, single pulse 2 Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 1 52 142 W 0.42 1.1 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 7 A ISpulse 28 A Thermal Characteristic Thermal resistance,junction-to-case RθJC Thermal resistance,junction-to-ambient RθJA 2.4 ℃/W 0.88 ℃/W 62.5 Rev.1.2 2023 www.way-on.com PDF
Документация на WMM7N80DB 

Дата модификации: 02.02.2024

Размер: 1.38 Мб

8 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.