WMO9N50D1B

WAYON
WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68Ω N-ch Power MOSFET Description TO-220 TO-252 TO-220F WMOS D1 is Wayon’s 1 generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. st Features  Typ.RDS(on)=0.68Ω@VGS=10V  100% avalanche tested ...
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товара
P= WMO18N50C4 (WAYON)
 
TO252 в ленте 2500 шт
 

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WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68Ω N-ch Power MOSFET Description TO-220 TO-252 TO-220F WMOS D1 is Wayon’s 1 generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. st Features  Typ.RDS(on)=0.68Ω@VGS=10V  100% avalanche tested  RoHS Compliant D,TAB G Applications  SMPS  Charger  DC-DC S Absolute Maximum Ratings（TC=25℃） Parameter Symbol WMK WML WMO Unit Drain-source voltage VDSS 500 V Gate-source voltage VGS ±30 V ID 9 A IDM 36 A EAS 405 mJ Continuous drain current 1 Pulsed drain current Avalanche energy, single pulse 2 Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 1 150 45 104 W 1.2 0.4 0.8 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 9 A ISpulse 36 A Thermal Characteristic Thermal resistance,junction-to-case RθJC 0.83 2.8 1.2 ℃/W Thermal resistance,junction-to-ambient RθJA 62.5 62.5 62 ℃/W Rev.1.2 2023 www.way-on.com PDF
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Дата модификации: 11.01.2024

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