WMQ175N10HG4

WAYON
WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMQ175N10HG4 uses Wayon's 4 th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize S the on-state resistance and yet maintain superior switching S S D D D G G S PDFN3030-8L performance. This device is well suited for high efficiency fast switching applications. ...
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товара
P= WMQ060N08LG2 (WAYON)
 
PDFN8L3X3 в ленте 3000 шт
 

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WMQ175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description WMQ175N10HG4 uses Wayon's 4 th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize S the on-state resistance and yet maintain superior switching S S D D D G G S PDFN3030-8L performance. This device is well suited for high efficiency fast switching applications. Features  VDS = 100V, ID = 42A RDS(on) < 18mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge  High Speed Switching RoHS D compliant G Applications S  Synchronous Rectification  DC/DC Converter  Power Management Switches Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 42 26.6 A IDM 168 A EAS 80 mJ PD 65.8 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 63 °C/W Thermal Resistance from Junction-to-Case RθJC 1.9 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803878 1/7 S S PDF
Документация на WMQ175N10HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 26.05.2023

Размер: 622.4 Кб

7 стр.

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