DGQ100N65CTL1D
DGQ100N65CTL1D
RoHS
COMPLIANT
IGBT Discrete
VCE
650
V
IC
100
A
VCE(SAT) IC=100A
1.25
V
\
G
C
E
Applications
Circuit
General purpose inverters
Motor drives
Uninterruptible power supply
Features
High speed smooth switching device for hard &
soft switching
Maximum junction temperature 175℃
Positive temperature coefficient
High ruggedness, temperature stable
M...
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DGQ100N65CTL1D
RoHS
COMPLIANT
IGBT Discrete
VCE
650
V
IC
100
A
VCE(SAT) IC=100A
1.25
V
\
G
C
E
Applications
Circuit
General purpose inverters
Motor drives
Uninterruptible power supply
Features
High speed smooth switching device for hard &
soft switching
Maximum junction temperature 175℃
Positive temperature coefficient
High ruggedness, temperature stable
Maximum Ratings
Parameter
Collector-Emitter Breakdown Voltage
DC Collector Current, limited by Tjmax
TC= 25°C value limited by bondwire
TC= 100°C
Diode Forward Current, limited by Tjmax
TC= 25°C value limited by bondwire
TC= 100°C
Continuous Gate-Emitter Voltage
Transient Gate-Emitter Voltage
Symbol
VCE
Value
650
Unit
V
IC
160
100
A
IF
160
100
A
VGE
±20
V
VGE
±30
V
400
A
(tp≤10µs,D<0.010)
Turn off Safe Operating Area VCE≤650V,
Tj≤ 150°C
Pulsed Collector Current, VGE=15V,
tp limited by Tjmax
ICM
400
A
Diode Pulsed Current, tp limited by Tjmax
IFpuls
400
A
Power Dissipation , Tj=175°C,Tc=25°C
Ptot
428
W
S-M396D
Rev.1.0, 10-May-23
www.21yangjie.com
1
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