YJD112005DG1

RoHS YJD112005DG1 COMPLIANT Silicon Carbide Schottky Diode VRRM 1200V IF(135°C) 6.5A QC 37nC Features ● Positive temperature coefficient ● Temperature-independent switching ● Maximum working temperature at 175 °C ● Unipolar devices and zero reverse recovery current ● Zero forward recovery current ● Essentially no switching losses ● Reduction of heat sink requirements ● High-frequenc...
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RoHS YJD112005DG1 COMPLIANT Silicon Carbide Schottky Diode VRRM 1200V IF(135°C) 6.5A QC 37nC Features ● Positive temperature coefficient ● Temperature-independent switching ● Maximum working temperature at 175 °C ● Unipolar devices and zero reverse recovery current ● Zero forward recovery current ● Essentially no switching losses ● Reduction of heat sink requirements ● High-frequency operation ● Reduction of EMI Typical Applications Typical applications are in power factor correction(PFC), solar inverter, uninterruptible power supply, motor drives, photovoltaic inverter, electric car and charger. Mechanical Data ● Package: TO-252 ● Terminals: Tin plated leads ● Polarity: As marked ■Maximum Ratings (TC=25℃ Unless otherwise specified) PARAMTETER SYMBOL UNIT Device marking code VALUE D112005DG1 Reverse voltage (repetitive peak) @ Tj=25°C VRRM V 1200 Reverse voltage (Surge Peak) @ Tj=25°C VRSM V 1200 Reverse voltage (DC) @ Tj=25°C VDC V 1200 14 Continuous forward current @ Tc=25°C Continuous forward current @ Tc=135°C IF A Continuous forward current @ Tc=149°C 6.5 5 Non-repetitive peak forward surge current @ Tc=25°C, tp=10ms, Half Sine Wave IFSM A PTOT W Power Dissipation@ Tc=25°C 52 57 Power Dissipation@ Tc=110°C 25 i2t Value@ Tc=25°C ,tp=10ms Operating junction and Storage temperature range ∫i2dt A2 S 13 Tj ,Tstg °C -55 to +175 1/5 S-SIC072 Rev.1.0,23-Feb-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
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Дата модификации: 02.03.2023

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