NUP1301

UMW
NUP1301 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). SOT−23 CASE 318 STYLE 11 Features • Low Capacitance (0.9 pF Maximum) • Single Package Integration Design • Provides ESD Protection for J...
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Технические характеристики

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Корпус SOT-23-3
Рабочее напряжение
Напряжение ограничения (диапазон)
Ток утечки при рабочем напряжении
Тип супрессора по свойствам
Количество линий ограничения
Паразитная емкость перехода
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NUP1301 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). SOT−23 CASE 318 STYLE 11 Features • Low Capacitance (0.9 pF Maximum) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • • • CATHODE 2 ANODE 1 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Package is Available 3 CATHODE/ANODE Applications • • • • • • • T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) Repetitive Peak Forward Current IFRM Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current 715 450 2.0 1.0 0.5 V mA mA A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. www.umw-ic.com 1 友台半导体有限公司 PDF
Документация на NUP1301 

Дата модификации: 30.10.2023

Размер: 186.9 Кб

3 стр.

NUP1301 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). SOT−23 CASE 318 STYLE 11 Features • Low Capacitance (0.9 pF Maximum) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 • • • • • • CATHODE 2 ANODE 1 Machine Model = Class C Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4) 8.0 kV (Contact) 15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Package is Available 3 CATHODE/ANODE Applications • • • • • • • T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base Stations I2C Bus Protection MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 70 Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) Repetitive Peak Forward Current IFRM Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S IFSM Peak Forward Surge Current 715 450 2.0 1.0 0.5 V mA mA A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. www.umw-ic.com 1 友台半导体有限公司 PDF
Документация на NUP1301 

Дата модификации: 06.05.2021

Размер: 185.5 Кб

3 стр.

    Публикации 1

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