SM12T1G

UMW
UMW R SMxxT1G These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate l...
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Технические характеристики

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Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Максимальный импульсный ток
Тип супрессора по свойствам двунаправленный, однонаправленный
Количество линий ограничения
Паразитная емкость перехода
Примечание Protects one bidirectional line or two unidirectional lines
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Файлы 1

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UMW R SMxxT1G These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 3 2 PIN 1. CATHODE 2. CATHODE 3. ANODE Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range − 5.0 V t o 36 V Peak Power − 300 Watt (8/20 ms) Low Leakage − 1.0 mA Flammability Rating UL 94 V−0 These are Pb−Free Devices Mechanical Characteristics: CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case FINISH: Corrosion Resistant Finish, Easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Symbol Value Ppk 300 Unit W IEC 61000−4−2 (ESD) Air Contact ±15 ±26 IEC 61000−4−4 (EFT) 40 A IEC 61000−4−5 (Lightning) 12 A 225 1.8 556 °mW° mW/°C °C/W RqJA 300 2.4 417 °mW mW/°C °C/W TJ, Tstg − 55 to +150 °C TL 260 °C °PD° Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient RqJA Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) °PD kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 3 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request www.umw-ic.com 1 UTD Semiconductor Co.,Limited PDF
Документация на SM12T1G 

UMW SMxxT1G

Дата модификации: 12.10.2022

Размер: 310.8 Кб

5 стр.

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