Серия микросхем памяти BL25CM2A
Общие характеристики
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| Организация памяти |  | |
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Документация на серию BL25CM2A
Товары серии BL25CM2A
| Наименование | i | Упаковка | Корпус | Особенности |
|---|---|---|---|---|
| BL25CM2A-CSRC (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A-CSRS (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A-CSTC (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A-CSTS (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A-PARC (CN BELL) | 1 шт | SOP-8 | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | |
| BL25CM2A-PARS (CN BELL) | SOP8L | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A-PATC (CN BELL) | — | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A-PATS (CN BELL) | SOP8L | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-CSRC (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-CSRS (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-CSTC (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-CSTS (CN BELL) | WLCSP8 | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-PARC (CN BELL) | — | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-PARS (CN BELL) | SOP8L | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-PATC (CN BELL) | SOP8L | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM2A5-PATS (CN BELL) | SOP8L | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V |