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Серия выпрямительных диодов BAS16

JSCJ

Общие характеристики

 Раздел Выпрямительные диоды
Схема включения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Обратный ток диода
Рабочая температура

Документация на серию BAS16

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES Fast Switching Speed For General Purpose Switching Applications z z High Conductance z 1 3 MARKING: MMBD4148T:KA2 2 BAS16T:A2 KA2 A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW RθJA 625 ℃/W TJ,TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Operation Junction and Storage Temperature Range Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Symbol Min V (BR) 75 Typ Max Unit Conditions V IR=1μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse recovery time trr 4 ns Forward voltage Reverse current www.jscj-elec.com 1 IF=IR=10mA Irr=0.1XIR,RL=100Ω Rev. - 2.0 PDF
Документация на BAS16T 

Author: Administrator

Дата модификации: 20.05.2020

Размер: 1.12 Мб

4 стр.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES Fast Switching Speed For General Purpose Switching Applications z z High Conductance z 1 MARKING: 3 MMBD4148T:KA2 2 BAS16T:A2 KA2 A2 Solid dot = Green molding compound device, if none,the normal device. KA2 A2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation Pd 200 mW RθJA 625 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage Symbol Min V (BR) 75 Typ Max Unit Conditions V IR=1μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V Capacitance between terminals CT 2 pF VR=0V,f=1MHz Reverse recovery time trr 4 ns Forward voltage Reverse current www.cj-elec.com 1 IF=IR=10mA Irr=0.1XIR,RL=100Ω B,Oct,2014 PDF
Документация на BAS16T 

Author: Administrator

Дата модификации: 15.10.2014

Размер: 1.77 Мб

4 стр.

    Товары серии BAS16

    Наименование i Упаковка Корпус t ов
    BAS16T (JSCJ)
     
     
    		 SOT-523
    BAS16X (JSCJ)
     
    		в ленте 120000 шт SOD-523