Серия выпрямительных диодов BAV99

JSCJ

Общие характеристики

 Раздел Выпрямительные диоды
Прямой ток диода (средний)
Прямое падение напряжения
Рабочая температура
Схема включения диодов

Документация на серию BAV99

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV99S HIGH-SPEED SWITCHING DIODE SOT-363 FEATURES  Small Plastic Package  High Switching Speed  Low Capacitance  Two Electrically Isolated Series Configuration Arrays MARKING: K1 K1 Solid dot = Pin1 indicate. MAXIMUM RATINGS @( Ta=25℃ unless otherwise noted ) Symbol Limits Unit Repetitive Peak Reverse Voltage 85 V VR Reverse Voltage 75 V IF VRRM Parameter Forward Current 150 IFRM Repetitive Peak Forward Current 450 IFSM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms 2.5 A PD Power Dissipation 200 mW Thermal Resistance from Junction to Ambient 625 ℃/W -55~+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range mA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage V(BR) Reverse current IR Forward voltage Total capacitance Reverse recovery time www.jscj-elec.com Test conditions Max Unit VR=75V 1 μA IF=1mA 0.715 IF=10mA 0.855 IF=50mA 1 IF=150mA 1.25 VR=0,f=1MHz 1.5 pF 6 ns Symbol VF Ctot trr IR=100μA Min Typ 75 IF= IR=10mA, Irr=0.1×IR, RL=100Ω 1 V V Rev. - 2.0 PDF
Документация на BAV99S 

Author: Administrator

Дата модификации: 20.05.2020

Размер: 1.16 Мб

4 стр.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes BAV99S HIGH-SPEED SWITCHING DIODE SOT-363 FEATURES  Small Plastic Package  High Switching Speed  Low Capacitance  Two Electrically Isolated Series Configuration Arrays MARKING: K1 K1 Solid dot = Pin1 indicate. MAXIMUM RATINGS @( Ta=25℃ unless otherwise noted ) Symbol Limits Unit Repetitive Peak Reverse Voltage 85 V VR Reverse Voltage 75 V IF VRRM Parameter Forward Current 150 IFRM Repetitive Peak Forward Current 450 IFSM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms 2.5 A PD Power Dissipation 200 mW Thermal Resistance from Junction to Ambient 625 ℃/W RΘJA Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 mA ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Reverse voltage V(BR) Reverse current IR Forward voltage Total capacitance Reverse recovery time www.cj-elec.com VF Ctot trr Test conditions Max Unit VR=75V 1 μA IF=1mA 0.715 IF=10mA 0.855 IF=50mA 1 IF=150mA 1.25 VR=0,f=1MHz 1.5 pF 6 ns IR=100μA Min Typ 75 IF= IR=10mA, Irr=0.1×IR, RL=100Ω 1 V V C,Mar,2016 PDF
Документация на BAV99S 

Author: Administrator

Дата модификации: 21.10.2014

Размер: 3.25 Мб

4 стр.

    Товары серии BAV99

    Наименование i Упаковка Корпус Uобр Iобр t ов
    BAV99S (JSCJ)
     
    		в ленте 3000 шт SOT-323-6 SOT363
    BAV99T (JSCJ)
     

    BAV99T (ONS-FAIR)
     
    		 SOT-523
    BAV99W (JSCJ)
     
    		в ленте 3000 шт SOT-323-3