Серия фототранзисторов APTR3216P3

Общие характеристики

	Раздел	Фототранзистор
	λ максимальной чувствительности
	Спектральная область чувствительности
	Поле зрения
	Максимальный ток коллектора

Документация на серию APTR3216P3

APTR3216P3BT Phototransistor DESCRIPTION PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES 3.2 mm x 1.6 mm SMD LED,1.05 mm thickness Mechanically and spectrally matched to the infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation at(or below) 25°C Free Air Temperature Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2018 Kingbright. All Rights Reserved. Spec No: DSAM2250 / 1203004760 Rev No: V.3 Date: 12/25/2018 Page 1 / 4  PDF

Документация на APTR3216P3BT 

APTR3216P3BT(Ver.3)

Дата модификации: 25.12.2018

Размер: 218.1 Кб

4 стр.

• найти APTR3216P3.pdf

Товары серии APTR3216P3