Серия FET транзисторов L2N7002

LRC

Общие характеристики

 Раздел FET транзисторы
Максимальное напряжение сток-исток
Диапазон номинальных напряжений затвора ±

Документация на серию L2N7002

L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ● ESD Protected:1000V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002DW1T1G 702 3000/Tape&Reel L2N7002DW1T3G 702 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current ID – ContinuousTC = 25°C ±115 ±75 TC = 100°C – Pulsed (Note 1) mAdc IDM ±800 VGS ±20 Vdc VGSM ±40 Vdc Symbol Limits Unit PD 380 mW Gate–Source Voltage – Continuous – Non–repetitive (tp≤50μs) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Per Device 250 FR−5 Board (Note 2) @ TA = 25ºC 3.0 mW/ºC RΘJA 328 ºC/W TJ,Tstg −55∼+150 ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 2. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/6 PDF
Документация на L2N7002DW1T1G 

Дата модификации: 09.03.2016

Размер: 611.3 Кб

6 стр.

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