Серия FET транзисторов L2SK801

Общие характеристики

	Раздел	FET транзисторы
	Корпус	SOT233
	Конфигурация и полярность
	Максимальное напряжение сток-исток
	Ток стока номинальный при 25°C, без учета ограничений корпуса
	Сопротивление открытого канала (мин)
	Сопротивление открытого канала при диапазоне Uзатв(ном)
	Рассеиваемая мощность

Документация на серию L2SK801

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts L2SK801LT1G S-L2SK801LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS Rating CASE 318, STYLE 21 SOT– 23 (TO–236AB) Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – – Continuous Pulse t < 10us ID 310 mAdc IDM 1200 VGS VGSM ±20 ±40 Vdc Vpk Symbol Max Unit PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 3.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Drain TJ, Tstg –ā55 to +150 °C 3 Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) 310 mAMPS 60 VOLTS R DS(on) = 1.5 W V GS(th) = 1.8 V N - Channel 3 THERMAL CHARACTERISTICS Junction and Storage Temperature 2.4 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. FR–5 = 1.0 x 0.75 x 0.062 in. 3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 801 1 M Characteristic Total Device Dissipation FR–5 Board (Note 2.) TA = 25°C Derate above 25°C 2 Gate Source 801 M = Device Code = Month Code ORDERING INFORMATION Device Marking Shipping L2SK801LT1G S-L2SK801LT1G 801 3000 Tape & Reel L2SK801LT3G S-L2SK801LT3G 801 10000 Tape & Reel Rev .O 1/4  PDF

Документация на L2SK801LT1G 

Дата модификации: 21.08.2012

Размер: 167.5 Кб

4 стр.

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Товары серии L2SK801