Серия биполярных транзисторов LMBT5551

LRC

Общие характеристики

 Раздел Биполярный транзистор
Напряжение падения КЭ в открытом состоянии
Ток коллектора
Коэффициент усиления по току
Тип проводимости и конфигурация

Документация на серию LMBT5551

LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel 1 2 3 SOT-363/SC-88 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 600 mAdc Collector Current — Continuous IC C2 B1 E1 E2 B2 C1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA 1.8 556 mW/°C °C/W PD 300 mW RθJA TJ , Tstg 2.4 417 –55 to +150 mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 160 — Vdc V(BR)CBO 180 — Vdc V (BR)EBO 6.0 — Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 120Vdc, I E = 0) I CBO ( V CB = 120Vdc, I E = 0, T A=100 °C) Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. I EBO — 50 nAdc — 50 µAdc — 50 nAdc Rev.O 1/5 PDF
Документация на LMBT5551DW1T1G 

Дата модификации: 27.08.2012

Размер: 118.2 Кб

5 стр.

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