Серия FET транзисторов LSI1012

LRC

Общие характеристики

 Раздел FET транзисторы
Корпус SOT-23-3
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C
Сопротивление открытого канала (мин)
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора ±

Документация на серию LSI1012

LESHAN RADIO COMPANY, LTD. LSI1012LT1G S-LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Gate 1 3 APPLICATIONS Source 2 D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers (Top View) MARKING DIAGRAM 3 Device Marking Shipping LSI1012LT1G S-LSI1012LT1G LSI1012LT3G S-LSI1012LT3G A2 3000/Tape&Reel A2 10000/Tape&Reel A2 1 M ORDERING INFORMATION 2 A2 = Specific Device Code M = Month Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "6 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) TA = 25_C TA = 85_C ID IS PD V 500 600 400 IDM Unit 350 1000 275 mA 250 225 mW TJ, Tstg −55 to 150 _C ESD 2000 V Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. Rev .O 1/6 Drain PDF
Документация на LSI1012LT1G 

Дата модификации: 21.08.2012

Размер: 451.7 Кб

6 стр.

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