Серия оптических датчиков положения EE-SA102

Omron

Общие характеристики

 Раздел Датчики положения оптические
Режим работы
Тип выхода
Рабочее расстояние
Способ монтажа
Ток излучателя (ном)
Коммутируемое напряжение (макс)
Коммутируемый ток (макс)

Документация на серию EE-SA102

Photomicrosensor (Actuator Mounted) EE-SA102 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • An actuator can be attached. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. 17 ■ Absolute Maximum Ratings (Ta = 25°C) Item 6 Emitter 0.5±0.1 13.5 Optical axis 11 Two, R1 Detector 6.2±0.5 2.5 Two, 0.7 Four, 0.25 1.25±0.1 Four, 0.5 Cross section AA Cross section BB Internal Circuit Ambient temperature 5±0.1 K C Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 85°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Soldering temperature 0 Two, 0.7−0.1 dia. 60° 1.8+0.1 −0.05dia. Two, R0.2 A E R3 0.4 3 Terminal No. Name A K C Anode Cathode Collector E Emitter Two, R0.2 Two, R0.2 0.5 Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Part C Unless otherwise specified, the tolerances are ±0.2 mm. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Detector 98 EE-SA102 Photomicrosensor (Actuator Mounted) PDF
Документация на серию EE-SA102 

Micro Sensing Device Data Book

Дата модификации: 15.06.2009

Размер: 111.4 Кб

2 стр.

    Товары серии EE-SA102

    Наименование i Упаковка
    EE-SA102 (OMRON)