Серия выпрямительных диодов MBR20L100

Taiwan Semiconductor

Общие характеристики

	Раздел	Выпрямительные диоды
	Корпус	TO220AB
	Схема включения диодов
	Максимальное обратное напряжение диода
	Прямой ток диода (средний)
	Особенности
	Обратный ток диода
	Рабочая температура
	Монтаж

Документация на серию MBR20L100

MBR20L100CT – MBR20L120CT Taiwan Semiconductor 20A, 100V - 120V Low VF Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 20 A VRRM 100 - 120 V IFSM 150 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.90g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device MBR20L100CT MBR20L120CT UNIT MBR20L100CT MBR20L120CT Repetitive peak reverse voltage VRRM 100 120 V Reverse voltage, total rms value VR(RMS) 70 84 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load (1) Peak repetitive reverse surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage IF 20 A IFSM 150 A IRRM 1 A IFRM 20 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: H2104

Документация на MBR20L100CT

Дата модификации: 04.05.2021

Размер: 537.4 Кб

6 стр.

найти MBR20L100.pdf

Товары серии MBR20L100

Наименование	i	Упаковка	U_прям
MBR20L100CT (TSC)		50 шт
MBR20L100CTC0 (TSC)
MBR20L100CTC0G (TSC)