Серия выпрямительных диодов TST30H200

Taiwan Semiconductor

Общие характеристики

 Раздел Выпрямительные диоды
Корпус TO220AB
Схема включения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Особенности
Обратный ток диода
Рабочая температура
Монтаж

Документация на серию TST30H200

TST30H100CW – TST30H200CW Taiwan Semiconductor 30A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ High efficiency High forward surge capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 30 A VRRM 100 - 200 V IFSM 200 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage TST30H TST30H TST30H TST30H UNIT 100CW 120CW 150CW 200CW TST30H TST30H TST30H TST30H 100CW 120CW 150CW 200CW 100 120 150 200 V 70 84 105 140 V IF 30 A IFSM 200 A dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: F2104 PDF
Документация на TST30H200CW 

Дата модификации: 04.05.2021

Размер: 567.4 Кб

6 стр.

    Товары серии TST30H200

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