Серия мостовых выпрямителей GBJ30

Общие характеристики

	Раздел	Мостовые выпрямители
	Корпус	GBJ30G
	Конфигурация соединения диодов
	Максимальное обратное напряжение диода
	Прямое падение напряжения
	Прямой ток диода (средн)

Документация на серию GBJ30

RoHS GBJ30A THRU GBJ30M COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E230084 ● Glass passivated chip junction ● Thin single in-line package ● High surge current capability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, industrial automation applications. Mechanical Data ● Package: 6KBJ Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body + ~ - ~ ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code GBJ30A GBJ30B GBJ30D GBJ30G GBJ30J GBJ30K GBJ30M GBJ30A GBJ30B GBJ30D GBJ30G GBJ30J GBJ30K GBJ30M Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Maximum RMS Voltage VRMS V 35 70 140 280 420 560 700 VDC V 50 100 200 400 600 800 1000 IO A GBJ30K GBJ30M Maximum DC blocking Voltage With heatsink Average rectified output Tc =100℃ current @60Hz sine wave, Without heatsink R-load Ta =25℃ Forward Surge Current (Non-repetitive) @8.3ms,Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode 30.0 4.0 350 IFSM A 700 I2t A2s 508 Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 Vdis KV 2.5 Tor kgꞏcm 8 Dielectric strength @ Terminals to case, AC 1 minute Mounting torque @Recommend torque：5kgꞏcm ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS GBJ30A Maximum instantaneous forward voltage drop per diode VF V Maximum DC reverse current at rated DC blocking voltage per diode IR μA Typical junction capacitance Cj pF GBJ30B GBJ30D GBJ30G IFM=15.0A 1.0 Tj =25℃ 5 Tj =125℃ Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 100 GBJ30J 108 1/4 S-B3622 Rev.1.0,14-Oct-24 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com  PDF

Документация на GBJ30G 

Microsoft Word - GBJ30A THRU GBJ30M

Дата модификации: 13.10.2024

Размер: 251.4 Кб

4 стр.

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Товары серии GBJ30