Серия биполярных транзисторов YJS12G06

Yangjie

Общие характеристики

 Раздел Биполярный транзистор

Документация на серию YJS12G06

RoHS YJS12G06D COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 60V 12A ＜8.5 mohm ＜12 mohm General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V TA=25℃ Unit 12 Drain Current (Silicon limited) ID A TA=100℃ 7.5 Pulsed Drain Current A IDM 48 A Avalanche energy B EAS 132 mJ Total Power Dissipation C PD 3.1 W TJ ,TSTG -55～+150 ℃ Junction and Storage Temperature Range ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 31 40 59 75 16 24 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJL ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJS12G06D F2 Q12G06D 4000 8000 64000 13“ reel 1/6 S-E141 Rev.1.1,22-Jun-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
Документация на YJS12G06DF2 

Дата модификации: 23.06.2021

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    Товары серии YJS12G06

    Наименование i Упаковка
    YJS12G06DF2 (YJ)