Серия микросхем памяти ZD25D40B

Zetta

Общие характеристики

 Раздел Память
Корпус SOP-8
Тип памяти
Подтип памяти
Интерфейс
Объём памяти
Организация памяти
Напряжение питания
Рабочая температура

Документация на серию ZD25D40B

Zetta 25D40/20 4 Megabit / 2 Megabit Serial Flash Memory with 4Kbytes Uniform Sector ZD25D40/20 FEATURES Single power supply operation - Full voltage range: 2.7-3.6 volt Flexible Architecture with 4KB sectors - Sector Erase (4K-bytes) - Block Erase (64K-bytes) - Page Program up to 256 bytes - More than 100K erase/write cycles - More than 20-year data retention 4 Mbit Serial Flash - 4 M-bit/512 K-byte, 2 M-bit/256 K-byte - 256 bytes per programmable page - Uniform 4K-byte Sectors/64K-byte Blocks Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin Standard and Dual - Standard SPI: CLK, CS#, DI, DO, WP#, - Dual SPI: CLK, CS#, DIO, DO, WP#, High performance program/erase speed - Page program time: 0.9ms typical - Sector erase time: 50ms typical - Block erase time: 300ms typical - Chip erase time: 2 Seconds typical(25D40) - Chip erase time: 1 Seconds typical(25D20) Package Options - 8-pin SOIC 150/208-mil - 8-pad USON8 3x2-mm - 8-pin TSSOP8 173-mil - All Pb-free packages are RoHS compliant - Fast Read Dual Output instruction - Auto-increment Read capability High performance - 85MHz clock rate for one data bit - 80MHz clock rate for two data bits Low power consumption - 8 mA typical active current - 1 uA typical power down current GENERAL DESCRIPTION The 25D40/20 is a 4 Megabit (512K-byte) / 2 Megabit (256K-byte) Serial Flash memory, with advanced write protection mechanisms. The 25D40/20 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output using SPI pins: Serial Clock, Chip Select, Serial DIO, DO, WP#. SPI clock frequencies of up to 85MHz are supported. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The 25D40/20 also offers a sophisticated method for protecting individual blocks against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect blocks, a system can unprotect a specific block to modify its contents while keeping the remaining blocks of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. The 25D40/20 is designed to allow either single Sector/Block at a time or full chip erase operation. The 25D40/20 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector or block. 25D40/20 1 PDF
Документация на серию ZD25D40B 

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Дата модификации: 16.10.2022

Размер: 949.3 Кб

32 стр.

ZD25D40B ZD25D40B 2.5 V~3.6V, 4M-bit Serial Multi I/O Flash Memory Datasheet Performance Highlight  Wide Supply Range from 2.5to 3.6V for Read, Erase and Program  Ultra Low Power consumption for Read, Erase and Program  X1 and X2 Multi I/O Support  High reliability with 100K cycling and 20 Year-retention 1 PDF
Документация на серию ZD25D40B 

Дата модификации: 09.03.2022

Размер: 1.41 Мб

63 стр.

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