ID7U603SEC-R1

Chipown
Chipown ID7U603 High Voltage Half Bridge Gate Drive IC General description Features The ID7U603 is a high voltage, high speed power MOSFET and IGBT driver based on P_sub P_epi process. The floating channel driver can be used to drive two N-channel power MOSFETs or IGBTs in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, ...
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Внешний вид серии ID7U603

Технические характеристики

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Корпус SO-8 SOIC8
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Опции Cross-conduction prevention logic with 520ns internal fixed Dead time
Рабочая температура
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Chipown ID7U603 High Voltage Half Bridge Gate Drive IC General description Features The ID7U603 is a high voltage, high speed power MOSFET and IGBT driver based on P_sub P_epi process. The floating channel driver can be used to drive two N-channel power MOSFETs or IGBTs in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.        Application Package/Order Information       Operation to +600 V Typically 210 mA/360 mA Source/Sink current 5 V and 3.3 V input logic compatible dV/dt Immunity ±50 V/nsec Gate drive supply range from 10 V to 20 V UVLO for VCC and VBS Cross-conduction prevention logic with 520ns internal fixed Dead time Matched propagation delay for all channels Small and medium-power motor driver Power MOSFET or IGBT driver Lighting ballast Half-Bridge Power Converters Full-Bridge Power Converters 1 VCC 2 IN VB 8 HO 7 ID7U603 3 SD VS 6 4 COM LO 5 Order code Package ID7U603SEC-R1 SOP8 Typical Application Circuit VDC, up to 600V RB BSD CBS 1 VCC VB 8 2 IN HO 7 15V ID7U603 M 3 SD VS 6 4 COM LO 5 MCU Q3 Q1 Q2 Q4 IF Rcs U Note 1: Add RB between VCC and Bootstrap Diode, to avoid VB-VS over-shoot when CBS is charged first time. The recommended value for RB is 10 ohm. www.chipown.com Wuxi Chipown Microelectronics Limited Rev.1.1 1/7 PDF
Документация на ID7U603SEC-R1 

Chipown

Дата модификации: 17.09.2023

Размер: 528.8 Кб

7 стр.

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