PN7113SBC-R1

Chipown
Chipown PN7113 High Side & Low Side Gate Drive IC General description Features The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs ...
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Технические характеристики

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Корпус SO-16 SOIC16
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Опции
Рабочая температура
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Chipown PN7113 High Side & Low Side Gate Drive IC General description Features The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.        Fully operational to +600 V 3 V logic compatible Floating channel designed for bootstrap operation Gate drive supply range from 10 V to 20 V UVLO for both channels 2.5A Output Current Capability Matched propagation delay for both channels Package/Order Information Application    High and medium-power motor driver Power MOSFET or IGBT driver Lighting ballast 9 NC HO 8 10 NC VB 7 11 VDD VS 6 12 HIN NC 5 PN7113 13 SD NC 4 14 LIN VCC 3 15 VSS COM 2 16 NC LO 1 Order code Package PN7113SBC-R1 SOIC16 Typical Circuit Up to 600V +5V VDD VS Controller PN7113 Q1 R2 D1 VB HIN SD R1 HO R3 +15V LOAD VCC LIN VSS COM R4 D2 LO Q2 R5 www.chipown.com Wuxi Chipown Microelectronics Limited R6 Rev. 3.2 1/7 PDF
Документация на PN7113SBC-R1 

Chipown

Дата модификации: 02.11.2022

Размер: 471.5 Кб

7 стр.

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