BL24C256A-PARC

Belling
EEPROM память с I2C интерфейсом, объёмом 262.1 кбит, в корпусе SOP-8 . Особенности: 1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 8000V . Напряжение питания: 1.7...5.5 В . Рабочая температура: -40...85 °C .
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Технические характеристики

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Корпус SOP-8
Тип памяти
Подтип памяти
Интерфейс
Объём памяти
Организация памяти
Напряжение питания
  Особенности: 1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 8000V
Рабочая температура
Время доступа
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Аналоги 2

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Тип Наименование Корпус Упаковка i Тип Подтип Интерфейс Объём Организация Напряжение Особенности T раб Время доступа Карточка
товара
A- BL24C256A-NTRC (CN BELL)
 
— в ленте 50 шт
 
 1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 8000V
A- BL24C256A-SFRC (CN BELL)
 
TSSOP-8
 
 1 Million Write Cycles, 100 years data retention, 1 MHz clock frequency, Random and sequential Read modes, Byte Write within 3 ms, Page Write within 3 ms, Partial Page Writes Allowed, Write Protect Pin for Hardware Data Protection, ESD/Latch-up protection HBM 8000V

Файлы 1

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BL24C256A 256Kbits (32768×8) Features    Compatible with all I2C bidirectional data – Page Write within 3 ms transfer protocol – Partial Page Writes Allowed Memory array: – 256 Kbits (32 Kbytes) of EEPROM – Page size: 64 bytes – Additional Write lockable page  Write Protect Pin for Hardware Data Protection  Schmitt Trigger, Filtered Inputs for Noise Suppression High-reliability  Single supply voltage and high speed: – 1 MHz  Random and sequential Read modes  Write: – – Endurance: 1 Million Write Cycles – Data Retention: 100 Years Enhanced ESD/Latch-up protection  – Byte Write within 3 ms HBM 8000V 8-lead PDIP/SOP/TSSOP/UDFN packages  Description  The BL24C256A provides 262144 bits of serial low-power electrically erasable and programmable read- essential. only memory (EEPROM), organized as 32768   and low-voltage operation are The BL24C256A offers an additional page, words of 8 bits each. named the Identification Page (64 bytes). The The device is optimized for use in many Identification Page can be used to store industrial and commercial applications where sensitive application parameters which can be (later) permanently locked in Read-only mode. Pin Configuration ８-lead PDIP ８-lead SOP ８-lead TSSOP ８-pad DFN A0 １ 8 VCC A0 １ 8 VCC A0 １ 8 VCC VCC 8 1 A0 A1 ２ 7 WP A1 ２ 7 WP A1 ２ 7 WP WP 7 2 A1 A2 ３ 6 SCL A2 ３ 6 SCL A2 ３ 6 SCL SCL 6 3 A2 GND ４ 5 SDA GND ４ 5 SDA GND ４ 5 SDA SDA 5 4 GND Bottem view BL24C256A 256Kbits (32768×8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited © 2016 Belling All Rights Reserved www.belling.com.cn 1-18 PDF
Документация на BL24C256A-PARC 

DESCRIPTION

Дата модификации: 22.03.2017

Размер: 577.9 Кб

16 стр.

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