LBC857CWT1G

LRC
LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features W...
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Технические характеристики

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Корпус SOT-323-3
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Напряжение падения КЭ в открытом состоянии
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
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Аналоги 1

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Тип Наименование Корпус Упаковка i Тип Пара Pрасс UКЭ(макс) UКЭ(пад) IК(макс) F гран h 21 R1 R2 Примечание Карточка
товара
A+ LBC857CLT1G (LRC)
 
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 — — — Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

Файлы 1

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LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage V CEO –65 –45 –30 V Collector–Base Voltage V CBO –80 –50 –30 V Emitter–Base Voltage V –5.0 –5.0 –5.0 V –100 –100 –100 mAdc Collector Current — Continuous EBO IC 3 1 2 SOT– 323 / SC-70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW R θJA T J , T stg 833 –55 to +150 °C/W °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 COLLECTOR 1 BASE 2 EMITTER DEVICE MARKING S-LBC856AWT1G= 3A; S-LBC856BWT1G= 3B;S-LBC857AWT1G= 3E; S-LBC857BWT1G = 3F; S-LBC857CWT1G= 3G;S-LBC858AWT1G= 3J; S-LBC858BWT1G= 3K;S-LBC858CWT1G= 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857B Only LBC858 Series Collector–Base Breakdown Voltage (IC = – 10 µA) LBC856 Series Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series LBC857 Series LBC858 Series LBC857 Series LBC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO v v v v nA µA 1.FR–5=1.0 x 0.75 x 0.062in Rev.O 1/6 PDF
Документация на LBC856BWT1G 

a1

Дата модификации: 27.08.2012

Размер: 275.7 Кб

6 стр.

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    2N3904 (DC)