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LMBTA44LT1G

LRC
LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application that requires high voltage. 1 2 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to LMBTA94LT1G • S- Prefix for Automotive and Other ...
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Технические характеристики

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Корпус SOT-23-3
Тип проводимости и конфигурация
Напряжение КЭ максимальное
Напряжение падения КЭ в открытом состоянии
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
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Файлы 1

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LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application that requires high voltage. 1 2 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to LMBTA94LT1G • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT– 23 COLLECTOR 3 DEVICE MARKING LMBTA44LT1G = 3D 1 BASE S-LMBTA44LT1G = 3D 2 EMITTER Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 400 V VCEO Collector to Emitter Voltage ................................................................................... 400 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ...................................................................................................... 200 mA ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Test unless otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Collector cut-off current ICEO VCE=350V 5 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA HFE(1) VCE=10V, IC=10 mA 80 HFE(2) VCE=10V, IC=1mA 50 HFE(3) VCE=10V, IC=50 mA 40 VCE(sat) IC=10 mA, IB=1mA 0.2 V VCE(sat) IC=50 mA, IB=5mA 0.3 V VBE(sat) IC=10 mA, IB= 1 mA 0.9 V fT VCE=10V, IC=20mA DC current gain 300 Collector-emitter saturation voltage Base-emitter sataration voltage Transition frequency 50 MHz Rev.O 1/3 PDF
Документация на LMBTA44LT1G 

Дата модификации: 27.08.2012

Размер: 94.2 Кб

3 стр.

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    BC807-40 (YJ)