S-LDTD114ELT1G

LRC
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTD114ELT1G S-LDTD114ELT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f...
развернуть ▼ свернуть ▲
 

Технические характеристики

показать свернуть
Корпус SOT-23-3
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Аналоги 1

показать свернуть
Тип Наименование Корпус Упаковка i Тип Пара Pрасс UКЭ(макс) UКЭ(пад) IК(макс) F гран h 21 R1 R2 Примечание Карточка
товара
P= AD-DTC114ECA (JSCJ)
 
SOT-23-3
 
 — — —

Файлы 1

показать свернуть
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTD114ELT1G S-LDTD114ELT1G • Applications Inverter, Interface, Driver • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • • 3 1 2 SOT-23 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol VCC 50 V Input voltage VIN −10 to +40 V Output current IC 500 mA Power dissipation PD 200 mW Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C 3 COLLECTOR R2 2 EMITTER Unit Supply voltage R1 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTD114ELT1G S-LDTD114ELT1G CA 10 10 3000/Tape & Reel LDTD114ELT3G S-LDTD114ELT3G CA 10 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V Unit V Conditions VCC= 5V, IO= 100µA VO= 0.3V, IO= 10mA IO/II= 50mA/2.5mA II − − 0.88 mA VI= 5V IO(off) − − 0.5 µA VCC= 50V, VI=0V GI 56 − − − VO= 5V, IO= 50mA Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − − 200 − MHz VCE=10V, IE= −50mA, f=100MHz Transition frequency fT ∗ ∗ Characteristics of built-in transistor Rev.O 1/3 PDF
Документация на S-LDTD114ELT1G 

a1

Дата модификации: 18.08.2008

Размер: 375 Кб

3 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.

    2N3904 (DC)