NSI8100N

Novosense
NSi8100/ NSi8101 High Reliability Bidirectional I2C Isolators Datasheet (EN) 2.2 Product Overview The NSi810x devices are high reliability bidirectional isolators that are compatible with I2C interface. The NSi810x devices are AEC-Q100 qualified. The NSi810x devices are safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromag...
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Технические характеристики

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Корпус SO-8 SOIC8
Напряжение изоляции RMS
Кол-во передатчиков
Кол-во приемников
Скорость передачи данных
Максимальная задержка сигнала
Диапазон напряжений питания
Примечание
Рабочая температура
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Аналоги 2

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Тип Наименование Корпус Упаковка i Изоляция TX RX Скорость Задержка U пит Примечание T раб Карточка
товара
P= CA-IS3020S (CHIPANLG)
 
SO-8 SOIC8 в ленте 2500 шт
 
 — — — —
F~ PAI220N31 (2PAI)
 
SO-8 SOIC8 в ленте 4000 шт
 
 2 SOP-8 Digital Isolators ROHS

Файлы 1

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NSi8100/ NSi8101 High Reliability Bidirectional I2C Isolators Datasheet (EN) 2.2 Product Overview The NSi810x devices are high reliability bidirectional isolators that are compatible with I2C interface. The NSi810x devices are AEC-Q100 qualified. The NSi810x devices are safety certified by UL1577 support several insulation withstand voltages (3.75kVrms, 5kVrms), while providing high electromagnetic immunity and low emissions at low power consumption. The I2C clock of the NSi810x is up to 2MHz, and the common-mode transient immunity (CMTI) is up to 150kV/us. Wide supply voltage of the NSi810x device support to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use. Key Features  Up to 5000Vrms Insulation voltage  I2C Clock rate: up to 2MHz  Power supply voltage: 2.5V to 5.5V  AEC-Q100 Grade 1 qualified Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Power over ethernet  Isolated I2C, SMBus, or PMBus interface  I2C level shifting  Battery Management Device Information Part Number NSI810xN-DSPR Package SOP8 Body Size 6.00mm × 5.00mm NSI810xW-DSWR SOW16 10.30mm × 7.50mm  High CMTI: 150kV/us  Chip level ESD: HBM: ±6kV  High system level EMC performance: Functional Block Diagrams Enhanced system level ESD, EFT, Surge immunity  Isolation barrier life: >60 years  Low power consumption: 1.5mA/ch (1 Mbps)  Low propagation delay: <15ns  Operation temperature: -40℃~125℃ Figure 1. NSi810xN Block Diagram  RoHS-compliant packages: SOP8 SOW16 Figure 2. NSi810xW Block Diagram Copyright © 2020, NOVOSENSE Page 1 PDF
Документация на NSI8100N 

Copyright © 2019, NOVOSENSE Keywords:

Дата модификации: 28.06.2021

Размер: 3.08 Мб

22 стр.

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