NSM2011-10B3R-DSWR

NSM2011 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 5kV High-Isolation Datasheet (EN) 1.0 Product Overview NSM2011 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the curren...
развернуть ▼ свернуть ▲

Технические характеристики

показать свернуть
Пиковый измеряемый ток
Тип выходного сигнала
Время срабатывания
Напряжение питания
Ток потребления
Рабочая температура
Примечания Chip-level Current Sensor with Integrated Current Path(<100A)
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Файлы 1

показать свернуть
NSM2011 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 5kV High-Isolation Datasheet (EN) 1.0 Product Overview NSM2011 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2011 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current. Compared with the current sampling method of the Shunt+ isolated op amp, NSM2011 eliminates the need for the primary side power supply and has a simple and convenient layout. At the same time, it has extremely high isolation withstand voltage and Lifetime stability. In high-side current monitoring applications, NSM2011 can reach a working voltage of 1550Vpk, and it can withstand 10kV surge voltage and 13kA surge current without adding any protection devices. Due to NSM2011 internal accurate temperature compensation algorithm and factory accuracy calibration, this current sensor can maintain good accuracy in the full temperature working range, and the customer does not need to do secondary programming or calibration.  Maximum surge isolation withstand voltage (VIOSM): 10kV  Maximum surge current (Isurge): 13kA  CMTI > 100V/ns  CTI(I)  Creepage distance/Clearance distance: 8mm  An external capacitor on the Filter pin can reduce noise (sacrificing bandwidth)  NOVOSENSE innovative ‘Spin Current’ technology makes offset temperature drift very small  Ratiometric output  Working temperature: -40°C ~ 125°C  Primary internal resistance: 0.85mΩ  Wide body SOIC16 package  UL62368/EN62368 safety certification  ROHS Applications  Solar system  Industrial power supply  Motor control  OBC/DCDC/PTC Heater  Charging pile Support 3.3V/5V power supply (different version) Key Features  High bandwidth and fast response time  240kHz bandwidth  2.2us response time  High-precision current measurement  Differential Hall sets can immune stray field  High isolation level that meets UL standards  Maximum repeated isolation withstand voltage (VIROM): 1550Vpk  Maximum working isolation withstand voltage (VIOWM): 1097Vrms  Withstand isolation voltage (VISO): 5000Vrms Copyright © 2021, NOVOSENSE Page 1 PDF
Документация на NSM2011-100B5R-DSWR 

Дата модификации: 01.06.2022

Размер: 1.91 Мб

24 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.