2SC3743

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 fT VCE = 5 V, IC = 0.1 A, f = 1 MHz Turn-on time ton IC = 0.8 A Storage time tstg Fall time tf ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating U...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Файлы 1

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 fT VCE = 5 V, IC = 0.1 A, f = 1 MHz Turn-on time ton IC = 0.8 A Storage time tstg Fall time tf ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 900 V Collector-emitter voltage (E-B short) VCES 900 V Collector-emitter voltage (Base open) VCEO 800 V Emitter-base voltage (Collector open) VEBO 7 V Base current IB 1 A Collector current IC 3 A Peak collector current ICP 5 A Collector power dissipation PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C 1.3±0.2 1.4±0.1 Solder Dip (4.0) 14.0±0.5 Transition frequency d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • High-speed switching • Wide safe operation area and high breakdown voltage • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 ■ Features 7.5±0.2 M Di ain sc te on na tin nc ue e/ d 0.7±0.1 Unit: mm 10.0±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ue 2 tin ■ Electrical Characteristics TC = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 900 V, IE = 0 50 µA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 50 µA nc e/ Di sc on Parameter Collector-emitter voltage (Base open) 800 V VCE = 5 V, IC = 0.1 A 6 VCE = 5 V, IC = 0.8 A 6 Collector-emitter saturation voltage VCE(sat) IC = 0.8 A, IB = 0.16 A 0.6 V Base-emitter saturation voltage VBE(sat) IC = 0.8 A, IB = 0.16 A 1.2 V Pl hFE1 hFE2 M ain te na Forward current transfer ratio  4 MHz 1.0 µs IB1 = 0.16 A, IB2 = − 0.32 A 4.0 µs VCC = 250 V 1.0 µs Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00109AED 1 PDF
Документация на 2SC3743 

2SC3743 SJD00109AED

Дата модификации: 29.11.2011

Размер: 250.7 Кб

4 стр.

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