2SC5904

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit: mm 26.5±0.5 Collector-base voltage (Emitter open) VCBO 1 700 V Emitter-base voltage (Collector open) VEBO Base current IB Collector current IC Peak collector current * ICP Collector power dissi...
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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit: mm 26.5±0.5 Collector-base voltage (Emitter open) VCBO 1 700 V Emitter-base voltage (Collector open) VEBO Base current IB Collector current IC Peak collector current * ICP Collector power dissipation PC Ta = 25°C 1 700 V 600 V 7 V 8 A 17 A 27 A 65 W Tj Storage temperature Tstg ce /D isc on tin 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 3 1: Base 2: Collector 3: Emitter TOP-3E-A1 Package Marking Symbol: C5904 150 °C −55 to +150 °C C B ue Note) *: Non-repetitive peak collector current 1.1±0.1 Internal Connection 3.5 Junction temperature 5˚ 5.5±0.3 Unit VCES (4.0) 2.0±0.2 (2.0) Rating VCEO (1.2) (2.0) 18.6±0.5 (2.0) Solder Dip Symbol 3.3±0.3 Parameter Collector-emitter voltage (Base open) 5˚ 5˚ di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage (E-B short) (23.4) M Di ain sc te on na tin nc ue e/ d • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area (4.5) 5˚ (10.0) ■ Features 3.0±0.3 5˚ φ 3.2±0.1 22.0±0.5 15.5±0.5 E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter en an Collector-base cutoff current (Emitter open) Symbol ICBO Conditions Min Typ Max Unit VCB = 1 000 V, IE = 0 50 µA VCB = 1 700 V, IE = 0 1 mA 50 µA 12  IEBO VEB = 7 V, IC = 0 hFE VCE = 5 V, IC = 8.5 A Collector-emitter saturation voltage VCE(sat) IC = 8.5 A, IB = 2.13 A 3 V Base-emitter saturation voltage VBE(sat) IC = 8.5 A, IB = 2.13 A 1.5 V Ma int Emitter-base cutoff current (Collector open) Forward current transfer ratio 5 Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 8.5 A, Resistance loaded 3.0 µs IB1 = 2.13 A, IB2 = −4.25 A 0.2 µs Fall time tf 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2004 SJD00305AED 1 PDF
Документация на 2SC5904 

2SC5904 SJD00305AED

Дата модификации: 29.11.2011

Размер: 229.1 Кб

3 стр.

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