ABS210

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ABS201 THRU ABS210 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Junction PIN DESCRIPTION 1 Input Pin（~） • Reverse Voltage - 100 to 1000 V 2 Input Pin（~） • Forward Current - 2 A 3 Output Anode（+） • High Surge Current Capability 4 Output Cathode（-） • Designed for Surface Mount Application MECHANICAL DATA • Case: ABS/LBF • Ter...
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Технические характеристики

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Корпус SMD4
Максимальное обратное напряжение диода
Прямое падение напряжения
Прямой ток диода (средн)
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Аналоги 1

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Тип Наименование Корпус Упаковка i Схема Uобр Uпрям Iпрям Примечание T раб Карточка
товара
P= ABS210 (YJ)
 
— в ленте 4000 шт
 
 Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM),Case ABS, Silicon

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ABS201 THRU ABS210 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Junction PIN DESCRIPTION 1 Input Pin（~） • Reverse Voltage - 100 to 1000 V 2 Input Pin（~） • Forward Current - 2 A 3 Output Anode（+） • High Surge Current Capability 4 Output Cathode（-） • Designed for Surface Mount Application MECHANICAL DATA • Case: ABS/LBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 88mg 0.0031oz 3 4 2 1 ABS/LBF Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols ABS201 ABS202 ABS204 ABS206 ABS208 ABS210 Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Parameter Average Rectified Output Current at T L = 100 °C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage per element @I F =2.0A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =125 °C @ T A =25 °C Typical Junction Capacitance（Note1） Typical Thermal Resistance（Note2） Operating and Storage Temperature Range IO 2.0 A I FSM 50 A VF 1.0 V IR 5.0 100 μA Cj 25 pF RθJA 65 °C/W T j , T stg -55 ~ +150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×(5×5mm 2 ）copper pad. REV.08 1 of 3 PDF
Документация на ABS201 

ABS-A-ABS210-2A1KV.cdr

Дата модификации: 01.01.1970

Размер: 1.34 Мб

3 стр.

ABS201 THRU ABS210 2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING • Glass Passivated Chip Junction PIN DESCRIPTION 1 Input Pin（~） • Reverse Voltage - 100 to 1000 V 2 Input Pin（~） • Forward Current - 2 A 3 Output Anode（+） • High Surge Current Capability 4 Output Cathode（-） • Designed for Surface Mount Application MECHANICAL DATA • Case: ABS/LBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 88mg 0.0031oz 3 4 2 1 ABS/LBF Package Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols ABS201 ABS202 ABS204 ABS206 ABS208 ABS210 Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Parameter Average Rectified Output Current at T L = 100 °C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage per element @I F =2.0A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A =125 °C @ T A =25 °C Typical Junction Capacitance（Note1） Typical Thermal Resistance（Note2） Operating and Storage Temperature Range IO 2.0 A I FSM 50 A VF 1.0 V IR 5.0 100 μA Cj 25 pF RθJA 65 °C/W T j , T stg -55 ~ +150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×(5×5mm 2 ）copper pad. REV.08 1 of 3 PDF
Документация на ABS210 

ABS-A-ABS210-2A1KV.cdr

Дата модификации: 01.01.1970

Размер: 1.34 Мб

3 стр.

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    1N4936 (YJ)