WMK80N06TS

WAYON
WMK80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features  GD S TO-220 VDS= 60V, ID = 80A RDS(on) < 8mΩ @ VGS = 10V  Extremely Low Switching Loss  Excellent Stability and Uniformity  Low Gate C...
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  • Корпус: —
  • Норма упаковки: 50  шт. (в линейках)

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Тип Наименование Корпус Упаковка i Карточка
товара
P- NCE6080A (NCE)
 
TO-220-3 в линейках 50 шт
 

Файлы 1

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WMK80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WMK80N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features  GD S TO-220 VDS= 60V, ID = 80A RDS(on) < 8mΩ @ VGS = 10V  Extremely Low Switching Loss  Excellent Stability and Uniformity  Low Gate Charge  100% EAS Guaranteed RoHS D compliant Applications G  Power Management Switches  DC/DC Converters S Absolute Maximum Ratings（Tc = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID TC=100°C 80 A 51 IDM 320 A EAS 105.8 mJ PD 93 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to- Ambient3 RθJA 53 °C/W Thermal Resistance from Junction-to-Case RθJC 1.34 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.2.0, 2022 Doc:W0803769 1/7 PDF
Документация на WMK80N06TS 

Shang Hai Wayon Thermo-Electro

Дата модификации: 14.12.2023

Размер: 623.3 Кб

7 стр.

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