DB207SF1

Yangjie
RoHS DB201S THRU DB207S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and ...
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RoHS DB201S THRU DB207S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data ● Package: DBS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, Halogen free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code DB201S DB202S DB203S DB204S DB205S DB206S DB207S DB201S DB202S DB203S DB204S DB205S DB206S DB207S 50 100 200 400 600 800 1000 DB205S DB206S DB207S DB205S DB206S DB207S VRRM V IO A 2.0 IFSM A 60 Current squared time @1ms≤t<8.3ms Tj=25℃, Rating of per diode I2t A2s 15 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Repetitive peak reverse voltage Average rectified output On glass-epoxi current @60Hz sine wave, substrate R-load, Ta=40℃ Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS SYMBOL UNIT DB201S DB202S DB203S DB204S VF V IFM=1.0A 1.00 IRRM μA VRM=VRRM 5 ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER Thermal Resistance SYMBOL Between junction and ambient, On glass-epoxi substrate RθJ-A Between junction and lead RθJ-L UNIT DB201S DB202S DB203S DB204S 68.0 ℃/W 15.0 1/4 S-S012 Rev. 2.3, 22-Feb-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
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Microsoft Word - DB201S THRU DB207S

Дата модификации: 22.02.2021

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