DBL106S

Yangjie
RoHS DBL101S THRU DBL107S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, an...
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Технические характеристики

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Корпус DBLS
Конфигурация соединения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Прямой ток диода (средн)
Примечание Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon
Рабочая температура
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RoHS DBL101S THRU DBL107S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data ● Package: DBLS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, Halogen free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT DBL101S DBL102S DBL103S DBL104S DBL105S DBL106S DBL107S DBL101S DBL102S DBL103S DBL104S DBL105S DBL106S DBL107S Device marking code VRRM V IO A 1.0 IFSM A 30 It 2 A2s Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Repetitive peak reverse voltage Average rectified output current @60Hz sine wave, R-load, Ta=40℃ On glass-epoxi substrate Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ Current squared time @1ms≤t≤8.3ms Tj=25℃，Rating of per diode 50 100 200 400 600 800 1000 3.7 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL UNIT VF IRRM V TEST DBL101S DBL102S DBL103S DBL104S DBL105S DBL106S DBL107S CONDITIONS 1.00 IFM=0.5A μA VRM=VRRM 5 1/4 S-S013 Rev. 2.1, 28-Apr-14 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
Документация на DBL101S 

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Дата модификации: 23.07.2018

Размер: 703.5 Кб

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