DBL157S

Yangjie
RoHS DBL151S THRU DBL157S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, an...
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Технические характеристики

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Корпус DBLS
Конфигурация соединения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Прямой ток диода (средн)
Примечание Bridge Rectifier Diode, 1.5A, 1000V V(RRM), Silicon
Рабочая температура
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RoHS DBL151S THRU DBL157S COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data ● Package: DBLS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, Halogen free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT DBL151S DBL152S DBL153S DBL154S DBL155S DBL156S DBL157S DBL151S DBL152S DBL153S DBL154S DBL155S DBL156S DBL157S Device marking code VRRM V IO A 1.5 IFSM A 60 I2t A2s 15 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Repetitive peak reverse voltage Average rectified output On glass-epoxi current @60Hz sine wave, substrate R-load, Ta=40℃ Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode 50 100 200 400 600 800 1000 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL UNIT VF IRRM V TEST DBL151S DBL152S DBL153S DBL154S DBL155S DBL156S DBL157S CONDITIONS 1.00 IFM=0.7A 5 μA VRM=VRRM 1/4 S-S015 Rev. 2.2, 18-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
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Microsoft Word - DBL151S THRU DBL157S

Дата модификации: 18.03.2020

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