GBU808

RoHS GBU8005 THRU GBU810 COMPLIANT Bridge Rectifier Features ● UL recognition, file #E230084 ● Ideal for printed circuit boards ● High surge current capability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, power supply, switching mode power supply, adapter, audio equipment, and home ...
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Технические характеристики

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Корпус GBU
Конфигурация соединения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Прямой ток диода (средн)
Примечание Bridge Rectifier Diode, 1 Phase, 3.2A, 800V V(RRM), Silicon
Рабочая температура
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RoHS GBU8005 THRU GBU810 COMPLIANT Bridge Rectifier Features ● UL recognition, file #E230084 ● Ideal for printed circuit boards ● High surge current capability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, power supply, switching mode power supply, adapter, audio equipment, and home appliances applications. Mechanical Data ● Package: GBU Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ~ ~ ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810 Device marking code Repetitive peak reverse voltage Average rectified output current @60Hz sine wave, R-load GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810 With heatsink Tc =110℃ VRRM V IO A 50 100 200 400 600 800 1000 8.0 Without heatsink Ta =25℃ 3.2 Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ IFSM A I2t AS Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Dielectric strength @ terminals to case, AC 1 minute Vdis KV 2.5 Mounting torque @recommend torque:5kg·cm Tor kg·cm 8 Current squared time @1ms≤t≤8.3ms Tj=25℃, Rating of per diode 175 2 127 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS SYMBOL UNIT VF V IFM=4.0A IRRM μA VRM=VRRM GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810 1.00 5 1/4 S-B046 Rev. 2.2, 28-Nov-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
Документация на GBU8005 

T10XB型(SIP)硅橋式整流器

Дата модификации: 28.11.2018

Размер: 397.4 Кб

4 стр.

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