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RoHS HD1S THRU HD10S COMPLIANT Bridge Rectifiers Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telec...
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Технические характеристики

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Корпус MBS
Конфигурация соединения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Прямой ток диода (средн)
Примечание Bridge Rectifier, 1 Phase, 0,5A, 800V
Рабочая температура
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RoHS HD1S THRU HD10S COMPLIANT Bridge Rectifiers Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data ● Package: MBS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code Repetitive peak reverse voltage VRRM V IO A On alumina substrate Average rectified output current @60Hz sine wave, On glass-epoxi R-load, Ta=40℃ substrate Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ HD1S HD2S HD4S HD6S HD8S HD10S HD1S HD2S HD4S HD6S HD8S HD10S 100 200 400 600 800 1000 HD6S HD8S HD10S HD6S HD8S HD10S 0.8 0.5 IFSM A 25 I2t A2s 2.59 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Current squared time @1ms≤t≤8.3ms Tj=25℃,rating of per diode ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode TEST CONDITIONS HD1S HD2S HD4S VF V IFM=0.4A 1.00 IRRM μA VRM=VRRM 5 ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER Thermal Resistance SYMBOL Between junction and ambient, On alumina substrate Between junction and ambient, On glass-epoxi substrate RθJ-A Between junction and lead RθJ-L RθJ-A UNIT HD1S HD2S HD4S 76.0 ℃/W 134.0 20.0 1/4 S-S326 Rev. 2.3, 18-May-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
Документация на HD10SF1 

Microsoft Word - HD1S THRU HD10S

Дата модификации: 19.05.2021

Размер: 215 Кб

4 стр.

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