MBL10SA

Yangjie
RoHS MBL1SA THRU MBL10SA COMPLIANT Bridge Rectifiers Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and t...
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Технические характеристики

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Конфигурация соединения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Прямой ток диода (средн)
Примечание Bridge Rectifier Diode, 1 Phase, 0.8A, 1000V V(RRM), Silicon
Рабочая температура
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RoHS MBL1SA THRU MBL10SA COMPLIANT Bridge Rectifiers Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in AC/DC bridge full wave rectification for power supply, lighting ballast, battery charger, home appliances, office equipment, and telecommunication applications. Mechanical Data ● Package: MBLS Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: As marked on body ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code Repetitive peak reverse voltage VRRM V IO A On alumina substrate Average rectified output current @60Hz sine wave, On glass-epoxi R-load, Ta=40℃ substrate Surge(non-repetitive)forward current @60Hz half sine wave, 1 cycle, Tj=25℃ MBL1SA MBL2SA MBL4SA MBL6SA MBL8SA MBL10SA MBL1SA MBL2SA MBL4SA MBL6SA MBL8SA MBL10SA 100 200 400 600 800 1000 1.0 0.8 IFSM A 35 It 2 A2S 5.1 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 Current squared time @1ms≤t≤8.3ms Tj=25℃,rating of per diode ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode SYMBOL UNIT TEST CONDITIONS VF V IFM=0.5A IRRM μA VRM=VRRM MBL1SA MBL2SA MBL4SA MBL6SA MBL8SA MBL10SA 1.00 5 1/4 S-S896 Rev.2.1,30-Aug-16 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com PDF
Документация на MBL10SA 

T10XB型（SIP）硅橋式整流器

Дата модификации: 16.07.2018

Размер: 662.6 Кб

4 стр.

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