6N138M

UMW
UMW R 6N138,6N139 Darlington High Speed Transistor Photo Coupler Description The 6N138 and 6N139 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed photo darlington transistor in a plastic DIP8 package with different lead forming options. A separate design between photodiode and darlington transistor reduces the base-collector c...
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Корпус DIP-8
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UMW R 6N138,6N139 Darlington High Speed Transistor Photo Coupler Description The 6N138 and 6N139 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed photo darlington transistor in a plastic DIP8 package with different lead forming options. A separate design between photodiode and darlington transistor reduces the base-collector capacitance of the input transistor which improves the speed by several orders of magnitude over conventional phototransistor optocouplers. Features  High isolation 5000 VRMS  DC input with transistor output  Operating temperature range - 55 °C to 100 °C  REACH compliance  Halogen free (Optional)  MSL class 1 Applications  Low current line receivers  Current loop receivers  Out interface to CMOS-LSTTL-TTL  Pulse transformer replacement  Computer-peripheral interface www.umw-ic.com Package Outlines 1 友台半导体有限公司 PDF
Документация на 6N138M 

UMW 6N138,6N139

Дата модификации: 15.04.2022

Размер: 1.16 Мб

11 стр.

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    6N136M (YOUTAI)