Серия микросхем памяти BL25CM1A
Общие характеристики
| Раздел | Память | |
| Тип памяти |  | |
|---|---|---|
| Подтип памяти |  | |
| Интерфейс |  | |
| Объём памяти |  | |
| Организация памяти |  | |
| Напряжение питания |  | |
| Рабочая температура |  | |
| Время доступа |  | |
| Корпус | SOP-8 |
Документация на серию BL25CM1A
Товары серии BL25CM1A
| Наименование | i | Упаковка | Особенности |
|---|---|---|---|
| BL25CM1A-CSRC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A-CSRS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A-CSTC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A-CSTS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A-PARC (CN BELL) | в ленте 2500 шт | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | |
| BL25CM1A-PARS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A-PATC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A-PATS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 2 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-CSRC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-CSRS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-CSTC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-CSTS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-PARC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-PARS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-PATC (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V | ||
| BL25CM1A5-PATS (CN BELL) | 1 Million Write Cycles, 100 years data retention, 5 MHz clock frequency, Random and sequential Read modes, Byte Write within 8 ms, Page Write within 8 ms, Partial Page Writes Allowed, Write Protect: quarter, half or whole memory array, ESD/Latch-up protection HBM 8000V |